收藏本站
ZXMN2A01F
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
(Note 6)
T A = +25°C
Symbol
V DSS
V GSS
Value
20
± 12
2.2
Units
V
V
Continuous Drain Current, V GS = 10V
Pulsed Drain Current (Note 7)
Maximum Body Diode Continuous Current (Note 6)
Maximum Body Diode Continuous Current (Note 7)
(Note 6)
(Note 5)
T A = +70°C
T A = +25°C
I D
I DM
I S
I SM
1.7
1.9
8
1.29
8
A
A
A
A
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation
Linear Derating Factor
Total Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
P D
P D
R θ JA
T J, T STG
625
5
806
6.4
200
155
-55 to +150
mW
mW/°C
mW
mW/°C
°C/W
°C
Notes:
5. For a device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. For a device surface mounted on FR-4 PCB measured at t ≦ 5 secs.
7. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 μ s - pulse width limited by maximum junction temperature. Refer to Transient
Thermal Impedance graph.
ZXMN2A01F
Document number: DS33513 Rev. 3 - 2
2 of 7
www.diodes.com
March 2014
? Diodes Incorporated
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
ZXMN2A02N8TA MOSFET N-CH 20V 8.3A 8-SOIC
ZXMN2A02X8TC MOSFET N-CH 20V 6.2A 8-MSOP
ZXMN2A03E6TC MOSFET N-CHAN 20V SOT23-6
ZXMN2A04DN8TC MOSFET DUAL N-CHAN 20V 8SOIC
ZXMN2A14FTA MOSFET N-CH 20V 3.4A SOT23-3
ZXMN2AM832TA MOSFET N-CHAN DUAL 20V 8MLP
ZXMN2AMCTA MOSFET 2N-CH 20V 2.9A DFN
ZXMN2B01FTA MOSFET N-CH 20V 2.1A SOT23-3
相关代理商/技术参数
ZXMN2A02N8 制造商:ZETEX 制造商全称:ZETEX 功能描述:20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN2A02N8(1) 制造商:未知厂家 制造商全称:未知厂家 功能描述:
ZXMN2A02N8_07 制造商:ZETEX 制造商全称:ZETEX 功能描述:20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN2A02N8TA 功能描述:MOSFET 20V N Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMN2A02N8TC 制造商:ZETEX 制造商全称:ZETEX 功能描述:20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN2A02X8 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN2A02X8_05 制造商:ZETEX 制造商全称:ZETEX 功能描述:20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN2A02X8TA 功能描述:MOSFET 20V N Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube